Биполярный транзистор 2SC2460 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2460
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 45 MHz
Ёмкость коллекторного перехода (Cc): 130 pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: TO3
2SC2460 Datasheet (PDF)
2sc2460.pdf
isc Silicon NPN Power Transistor 2SC2460DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOComplement to Type 2SA1050Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc2463.pdf
2SC2463Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJunction temper
2sc2462.pdf
2SC2462Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2462Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 40 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dissipat
2sc2463.pdf
SMD Type TransistorsNPN Transistors2SC2463SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle
2sc2462.pdf
SMD Type TransistorsNPN Transistors2SC2462SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
2sc2461a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461ADESCRIPTIONWith TO-3 PackageComplementary to 2SA1051AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sc2461.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461DESCRIPTIONWith TO-3 PackageComplementary to 2SA1051Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050