Справочник транзисторов. 2SC2482

 

Биполярный транзистор 2SC2482 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2482
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.9 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO92

 Аналоги (замена) для 2SC2482

 

 

2SC2482 Datasheet (PDF)

 ..1. Size:211K  toshiba
2sc2482.pdf

2SC2482
2SC2482

 ..2. Size:4580K  jiangsu
2sc2482.pdf

2SC2482
2SC2482

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage :VCEO=300V 2. COLLECTOR Small Collector Output Capacitance: Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 300 VVCEO Co

 ..3. Size:258K  lge
2sc2482.pdf

2SC2482
2SC2482

2SC2482 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.800 High voltage :Vceo=300V 6.200 Small collector output capacitance: Cob=3.0pF(Typ) 8.4008.8000.9001.1000.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V1.500 TYPVCE

 ..4. Size:249K  lge
2sc2482 to-92l.pdf

2SC2482
2SC2482

2SC2482 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 14.700Features5.100 High voltage :Vceo=300V 7.800 Small collector output capacitance: Cob=3.0pF(Typ) 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.3500.55013.800Symbol Parameter Value Units14.200VCBO Collector-Base Voltage 300 VVCEO Collector-Emitter

 ..5. Size:175K  inchange semiconductor
2sc2482.pdf

2SC2482
2SC2482

INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2482DESCRIPTIONHigh breakdown voltageLow output capacitance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV chroma output applicationsColor TV horiz. driver applicationsHigh voltage switching and amplifier applicationsABSOLUTE MA

 0.1. Size:395K  mcc
2sc2482-y.pdf

2SC2482
2SC2482

MCCMicro Commercial ComponentsTM 2SC248220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2482-OPhone: (818) 701-4933Fax: (818) 701-4939 2SC2482-YFeatures High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF(Typ)NPN Epoxy meets UL 94 V-0 flammability ratingEpitaxial Silicon Moisture Sensitivity Level 1 Lead Free

 0.2. Size:395K  mcc
2sc2482-o.pdf

2SC2482
2SC2482

MCCMicro Commercial ComponentsTM 2SC248220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2482-OPhone: (818) 701-4933Fax: (818) 701-4939 2SC2482-YFeatures High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF(Typ)NPN Epoxy meets UL 94 V-0 flammability ratingEpitaxial Silicon Moisture Sensitivity Level 1 Lead Free

 8.1. Size:102K  panasonic
2sc2488.pdf

2SC2482
2SC2482

 8.2. Size:103K  panasonic
2sc2489.pdf

2SC2482
2SC2482

 8.3. Size:58K  panasonic
2sc2480 e.pdf

2SC2482
2SC2482

Transistor2SC2480Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25

 8.4. Size:74K  panasonic
2sc2480.pdf

2SC2482
2SC2482

Transistors2SC2480Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high-frequency amplification / oscillation / mixing 0.050.16+0.100.063 Features1 2 High transition frequency fT(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.200.05packing.

 8.5. Size:89K  panasonic
2sa1062 2sc2486.pdf

2SC2482
2SC2482

 8.6. Size:102K  panasonic
2sa1061 2sc2485.pdf

2SC2482
2SC2482

 8.7. Size:124K  jmnic
2sc2485.pdf

2SC2482
2SC2482

Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB

 8.8. Size:1168K  kexin
2sc2480.pdf

2SC2482
2SC2482

SMD Type TransistorsNPN Transistors2SC2480SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.9. Size:202K  inchange semiconductor
2sc2486.pdf

2SC2482
2SC2482

isc Silicon NPN Power Transistor 2SC2486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1062Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.10. Size:195K  inchange semiconductor
2sc2488.pdf

2SC2482
2SC2482

isc Silicon NPN Power Transistor 2SC2488DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SA1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RATI

 8.11. Size:195K  inchange semiconductor
2sc2489.pdf

2SC2482
2SC2482

isc Silicon NPN Power Transistor 2SC2489DESCRIPTION Good Linearity of hFECollector-Emitter Sustaining Voltage-: V = 150V (Min)CEO(SUS)Wide Area of Safe OperationComplement to Type 2SA1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier,high power amplifier applications.ABSOLUTE MAXIMUM RA

 8.12. Size:202K  inchange semiconductor
2sc2485.pdf

2SC2482
2SC2482

isc Silicon NPN Power Transistor 2SC2485DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.13. Size:202K  inchange semiconductor
2sc2484.pdf

2SC2482
2SC2482

isc Silicon NPN Power Transistor 2SC2484DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.14. Size:211K  inchange semiconductor
2sc2481.pdf

2SC2482
2SC2482

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh Current CapabilityHigh Collector Power DissipationComplement to Type 2SA1021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vertical deflection output applications.Col

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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