2SC2484 - описание и поиск аналогов

isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free

MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free

Transistor 2SC2480 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25

Transistors 2SC2480 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high-frequency amplification / oscillation / mixing 0.05 0.16+0.10 0.06 3 Features 1 2 High transition frequency fT (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20 0.05 packing.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage VCEO=300V 2. COLLECTOR Small Collector Output Capacitance Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Co

Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB

2SC2482 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 High voltage Vceo=300V 6.200 Small collector output capacitance Cob=3.0pF(Typ) 8.400 8.800 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V 1.500 TYP VCE

2SC2482 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 High voltage Vceo=300V 7.800 Small collector output capacitance Cob=3.0pF(Typ) 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 0.550 13.800 Symbol Parameter Value Units 14.200 VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter

SMD Type Transistors NPN Transistors 2SC2480 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

isc Silicon NPN Power Transistor 2SC2486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon NPN Power Transistor 2SC2488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION Good Linearity of h FE Collector-Emitter Sustaining Voltage- V = 150V (Min) CEO(SUS) Wide Area of Safe Operation Complement to Type 2SA1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SC2485 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2482 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV chroma output applications Color TV horiz. driver applications High voltage switching and amplifier applications ABSOLUTE MA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High Current Capability High Collector Power Dissipation Complement to Type 2SA1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection output applications. Col