2SC2487. Аналоги и основные параметры
Наименование производителя: 2SC2487
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 25 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO3
Аналоги (замена) для 2SC2487
- подборⓘ биполярного транзистора по параметрам
2SC2487 даташит
8.2. Size:395K mcc
2sc2482-y.pdf 
MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free
8.3. Size:395K mcc
2sc2482-o.pdf 
MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free
8.6. Size:58K panasonic
2sc2480 e.pdf 
Transistor 2SC2480 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25
8.7. Size:74K panasonic
2sc2480.pdf 
Transistors 2SC2480 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high-frequency amplification / oscillation / mixing 0.05 0.16+0.10 0.06 3 Features 1 2 High transition frequency fT (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20 0.05 packing.
8.10. Size:4580K jiangsu
2sc2482.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage VCEO=300V 2. COLLECTOR Small Collector Output Capacitance Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Co
8.11. Size:124K jmnic
2sc2485.pdf 
Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB
8.12. Size:258K lge
2sc2482.pdf 
2SC2482 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 High voltage Vceo=300V 6.200 Small collector output capacitance Cob=3.0pF(Typ) 8.400 8.800 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V 1.500 TYP VCE
8.13. Size:249K lge
2sc2482 to-92l.pdf 
2SC2482 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 High voltage Vceo=300V 7.800 Small collector output capacitance Cob=3.0pF(Typ) 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 0.550 13.800 Symbol Parameter Value Units 14.200 VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter
8.14. Size:1168K kexin
2sc2480.pdf 
SMD Type Transistors NPN Transistors 2SC2480 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.15. Size:202K inchange semiconductor
2sc2486.pdf 
isc Silicon NPN Power Transistor 2SC2486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.16. Size:195K inchange semiconductor
2sc2488.pdf 
isc Silicon NPN Power Transistor 2SC2488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATI
8.17. Size:195K inchange semiconductor
2sc2489.pdf 
isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION Good Linearity of h FE Collector-Emitter Sustaining Voltage- V = 150V (Min) CEO(SUS) Wide Area of Safe Operation Complement to Type 2SA1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RA
8.18. Size:202K inchange semiconductor
2sc2485.pdf 
isc Silicon NPN Power Transistor 2SC2485 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.19. Size:175K inchange semiconductor
2sc2482.pdf 
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2482 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV chroma output applications Color TV horiz. driver applications High voltage switching and amplifier applications ABSOLUTE MA
8.20. Size:202K inchange semiconductor
2sc2484.pdf 
isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.21. Size:211K inchange semiconductor
2sc2481.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High Current Capability High Collector Power Dissipation Complement to Type 2SA1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection output applications. Col
Другие транзисторы: 2SC248, 2SC2480, 2SC2481, 2SC2482, 2SC2483, 2SC2484, 2SC2485, 2SC2486, BC549, 2SC2488, 2SC2489, 2SC249, 2SC2490, 2SC2491, 2SC2492, 2SC2493, 2SC2494
