2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base

SMD Type TransistorsNPN Transistors2SC2532SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=40V+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2535DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2534DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed high voltage switching applicationSwitching regulator applicationsHigh speed DC-DC converter applicatio

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (T

2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacita

DATA SHEETNPN SILICON TRANSISTOR2SC2570AHIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1

DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:

Power Transistors2SC2590Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features Excellent collector current IC characteristics of forward currenttransfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute

2SC2512Silicon NPN Triple DiffusedApplication VHF Amplifier VHF TV Tuner, MixerOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati

2SC2396, 2SC2543, 2SC2544Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2396, 2SC2543, 2SC2544Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2396 2SC2543 2SC2544 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter voltage V

2SC2545, 2SC2546, 2SC2547Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2545, 2SC2546, 2SC2547Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2545 2SC2546 2SC2547 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maxi

2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 JEmitterA DCollectorBase BCLASSIFICATION OF hFE(1) KMillimet

2SC2580 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 9 A

2SC2581 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

2SC2577 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

2SC2578 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1104 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 7 A

2SC2585NPN SILICON RF TRANSISTORPACKAGE STYLEDESCRIPTION:The 2SC2585 is a Common EmitterDevice Designed for Low NioseAmplifier and Medium Power OscillatorApplications up to 8.5 GHz.MAXIMUM RATINGSIC 65 mAVCEO 12 VVCBO 25 VVEB 1.5 VPT 400 mW @ TC = 166 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OCDIMENSIONS IN MILLIMETERS1 = BASE 3 = COLLECTOR85 OC/WJC 2 &

JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION With TO-3PN package Complement to type 2SA1106 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings

JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAbsolute

JMnic Product Specification Silicon NPN Power Transistors 2SC2577 DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-

JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and sym

JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings

2SC2500 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.8008.200 Strobe flash applications 0.6000.800 Medium power amplifier applications 0.3500.55013.80014.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP2.4402.640Symbol Parameter Value Units0.000

2SC2551(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vo

2SC2500 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800Features 6.200 Strobe flash applications 8.4008.800 Medium power amplifier applications 0.9001.1000.4000.600 13.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter Va

HG RF POWER TRANSISTOR2SC2510ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) : C_30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2581DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SA1106APPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC2582DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 2SC2523DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD

isc Silicon NPN Power Transistor 2SC2555DESCRIPTIONHigh Collector-Emitter Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplicationsHigh speed DC-DC converter applicationsMinimum Lot-to-Lot variations for robust device

isc Silicon NPN Power Transistor 2SC2526DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1076Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SC2580DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon NPN Power Transistor 2SC2541DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch-mode CTV supply systems applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

isc Silicon NPN Power Transistor 2SC2552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic

isc Silicon NPN Power Transistor 2SC2581DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SA1106Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC2564DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2563DESCRIPTIONHigh power dissipationLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifier and general purposeapplicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2594DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 20V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierFor electronic flash unitConverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistors 2SC2501DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC2562DESCRIPTIONLow Collector Saturation Voltage:V = 0.4(V)(Max)@I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC2518DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic applicance applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC2528DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 0.7ACE(sat) CComplement to Type 2SA1078Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifier,Audio power amplifierDirv

isc Silicon NPN Power Transistor 2SC2577DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2570ADESCRIPTIONLow Noise and High GainNF = 1.5 dB TYP.Ga = 8 dB TYP. @f = 1.0 GHz, V = 10 V, I = 5 mACE CWide Dynamic RangeNF = 1.9 dB TYP.Ga = 9 dB TYP. @f = 1.0 GHz, V = 10 V, I = 15 mACE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2525DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC2579DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

isc Silicon NPN Power Transistor 2SC2522DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1072Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD

isc Silicon NPN Power Transistor 2SC2553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC2564DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC2592DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplement to Type 2SA1112100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF Driver,High power Amplifier complementaryPairs with 2SA1112.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2590DESCRIPTIONSilicon NPN epitaxial planar typeHigh transition frequencyComplementary to 2SA1110100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SC2578DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1103Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC2502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , powerswitching in in

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2556DESCRIPTIONHigh transistor frequencyLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

isc Silicon NPN Power Transistor 2SC2516DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

isc Silicon NPN Power Transistor 2SC2565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1095Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC2527DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2542DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25