2SC2611. Аналоги и основные параметры
Наименование производителя: 2SC2611
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO126
Аналоги (замена) для 2SC2611
- подборⓘ биполярного транзистора по параметрам
2SC2611 даташит
..1. Size:30K hitachi
2sc2611.pdf 
2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 1.25
..2. Size:339K foshan
2sc2611 3da2611.pdf 
2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR , &[ ]Purpose High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W C T 150 j T -55 150
..3. Size:191K inchange semiconductor
2sc2611.pdf 
isc Silicon NPN Power Transistor 2SC2611 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATI
8.1. Size:85K renesas
r07ds0273ej 2sc2618-1.pdf 
Preliminary Datasheet R07DS0273EJ0300 2SC2618 (Previous REJ03G0702-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier Complementary pair with 2SA1121 Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec
8.2. Size:24K hitachi
2sc2619.pdf 
2SC2619 Silicon NPN Epitaxial Application High frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2619 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction tempe
8.3. Size:39K hitachi
2sc2612.pdf 
2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7V Collector current IC 3A Collector peak curre
8.4. Size:49K hitachi
2sc2613.pdf 
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
8.5. Size:24K hitachi
2sc2618.pdf 
2SC2618 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1121 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2618 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector pow
8.6. Size:29K hitachi
2sc2610.pdf 
2SC2610 Silicon NPN Triple Diffused Application High voltage amplifier TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power d
8.9. Size:346K kexin
2sc2619.pdf 
SMD Type Transistors NPN Transistors 2SC2619 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
8.10. Size:331K kexin
2sc2618.pdf 
SMD Type Transistors NPN Transistors 2SC2618 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=35V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1121 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
8.11. Size:188K inchange semiconductor
2sc2616.pdf 
isc Silicon NPN Power Transistor 2SC2616 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UN
8.12. Size:192K inchange semiconductor
2sc2612.pdf 
isc Silicon NPN Power Transistor 2SC2612 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )
8.13. Size:186K inchange semiconductor
2sc2615.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2615 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage ,high speed and high power Switching applications ABSOLUTE MAXIMUM RATINGS(T =25
8.14. Size:192K inchange semiconductor
2sc2613.pdf 
isc Silicon NPN Power Transistor 2SC2613 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )
Другие транзисторы: 2SC2604, 2SC2605, 2SC2606, 2SC2607, 2SC2608, 2SC2609, 2SC261, 2SC2610, 13003, 2SC2612, 2SC2613, 2SC2613K, 2SC2614, 2SC2615, 2SC2616, 2SC2617, 2SC2618
