Справочник транзисторов. 2SC2636

 

Биполярный транзистор 2SC2636 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2636
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 600 MHz
   Ёмкость коллекторного перехода (Cc): 0.8 pf
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: SC71

 Аналоги (замена) для 2SC2636

 

 

2SC2636 Datasheet (PDF)

 ..1. Size:126K  panasonic
2sc2636.pdf

2SC2636
2SC2636

 ..2. Size:59K  panasonic
2sc2636 e.pdf

2SC2636
2SC2636

Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete

 8.1. Size:127K  toshiba
2sc2639.pdf

2SC2636
2SC2636

 8.2. Size:128K  toshiba
2sc2638.pdf

2SC2636
2SC2636

 8.3. Size:38K  panasonic
2sc2631 e.pdf

2SC2636
2SC2636

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

 8.4. Size:42K  panasonic
2sc2634 e.pdf

2SC2636
2SC2636

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

 8.5. Size:38K  panasonic
2sc2634.pdf

2SC2636
2SC2636

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

 8.6. Size:34K  panasonic
2sc2631.pdf

2SC2636
2SC2636

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

 8.7. Size:34K  panasonic
2sc2632.pdf

2SC2636
2SC2636

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

 8.8. Size:38K  panasonic
2sc2632 e.pdf

2SC2636
2SC2636

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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