Биполярный транзистор 2SC268B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC268B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 75 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO50-1
2SC268B Datasheet (PDF)
2sc2688.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O
2sc2688.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERColor TV chroma out pupt circuits 2. COLLECOTR3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXXXXX=Code ORDERING INFORMATION Part Number
2sc2688.pdf
2SC2688(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features Color TV chroma out pupt circuits 2.5007.4002.9001.1007.8001.5003.9003.0004.1003.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.6000.00011.0000.300Symbol Parameter Value Units2.100VCBO 300 VCollector-Emitter
2sc2688 3da2688.pdf
2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output circuits. :C ,f re TFeatures: Low C , high f . re T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25)
2sc2688.pdf
isc Silicon NPN Power Transistor 2SC2688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 50mA, I = 5mACE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS(T =2
2sc2681.pdf
isc Silicon NPN Power Transistor 2SC2681DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc2682.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2682DESCRIPTIONHigh voltageLow Saturation VoltageComplementary to 2SA1142 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2682 is designed for use in audio frequencypower amplifierABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050