2SC2712O - описание и поиск аналогов

 ..1. Size:353K  toshiba
 2sc2712o 2sc2712y 2sc2712gr 2sc2712bl.pdf 

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current V = 50 V, I = 150 mA (max) CEO C Excellent h linearity h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) C

 7.1. Size:264K  toshiba
 2sc2712.pdf 

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to

 7.2. Size:474K  toshiba
 2sc2712-o 2sc2712-y 2sc2712-gr 2sc2712-bl.pdf 

2SC2712 Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = 50 V (3) High collector current IC = 150 mA (max) (4) High hFE hFE = 70 to 700 (5) Excellent h

 7.3. Size:241K  mcc
 2sc2712-gr.pdf 

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

 7.4. Size:241K  mcc
 2sc2712-o.pdf 

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

 7.5. Size:241K  mcc
 2sc2712-y.pdf 

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

 7.6. Size:241K  mcc
 2sc2712-bl.pdf 

2SC2712-O MCC Micro Commercial Components TM 2SC2712-Y 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2712-GR CA 91311 Phone (818) 701-4933 2SC2712-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

 7.7. Size:235K  utc
 2sc2712.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2S

 7.8. Size:368K  secos
 2sc2712.pdf 

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Noise NF=1dB(Typ.), 10db(Max.) A L Complements of the 2SA1162 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70 140 120 240 20

 7.9. Size:653K  jiangsu
 2sc2712.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

 7.10. Size:732K  htsemi
 2sc2712.pdf 

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER Low Noise NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

 7.11. Size:274K  gsme
 2sc2712.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2712 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - C

 7.12. Size:201K  lge
 2sc2712 sot-23.pdf 

2SC2712 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collec

 7.13. Size:918K  blue-rocket-elect
 2sc2712.pdf 

2SC2712 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications Audio frequency genera

 7.14. Size:1048K  kexin
 2sc2712.pdf 

SMD Type Transistors NPN Transistors 2SC2712 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High voltage and high current VCEO = 50 V, IC = 150 mA (max) 1 2 Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) 1.Base 2.Emitter 3.collector

 7.15. Size:137K  hfzt
 2sc2712lt1.pdf 

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current Vceo=50V,Ic=150mA(Max.) Package SOT-23 * Excellent hFE Linearity hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE hFE=70-700 * Low Noise NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

 7.16. Size:1696K  slkor
 2sc2712-o 2sc2712-y 2sc2712-g 2sc2712-l.pdf 

 7.17. Size:652K  umw-ic
 2sc2712-o 2sc2712-y 2sc2712-gr 2sc2712-bl.pdf 

R UMW UMW 2SC2712 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V

 7.18. Size:1121K  cn evvo
 2sc2712-o 2sc2712-y 2sc2712-g 2sc2712-l.pdf 

2SC2712 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features High voltage and high current VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V

 7.19. Size:2374K  cn shikues
 2sc2712-lo 2sc2712-ly 2sc2712-lg 2sc2712-ll.pdf 

 7.20. Size:114K  cn fosan
 2sc2712.pdf 

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. 2SC2712 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc -

 7.21. Size:195K  cn hottech
 2sc2712.pdf 

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2712 Low Noise NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA 1. BASE Collector Power Dissipation PC 150 mW 2. E

 7.22. Size:206K  inchange semiconductor
 2sc2712.pdf 

isc Silicon NPN Power Transistor 2SC2712 DESCRIPTION With SOT-23 packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO