DATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltagePT = 1 W, VCEO = 60 VABSOLUTE MAXIMUM RATINGS (Ta = 25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2723DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLU

2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCE

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mmFM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C = 1.8 pF (typ.) ob High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-em

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit2SC2216 50Collector-base voltage VCBO V 2SC2717 30 2SC2216 45Collector-emitter VCEO

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 36 VCollector-Emitter Voltage VCEO 16 VEmitter-Base Voltage VEBO 4 VCollector Current IC 20 A

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small pack

2SC2712Bipolar Transistors Silicon NPN Epitaxial Type2SC27121. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = 50 V(3) High collector current: IC = 150 mA (max)(4) High hFE: hFE = 70 to 700(5) Excellent h

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm High DC current gain: hFE (1) = 100~320 Complementary to 2SA1150 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector cur

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter v

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity : h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) C

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2S

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC2735Silicon NPN EpitaxialApplicationUHF/VHF Local oscillator, frequency converterOutlineMPAK311. Emitter2. Base23. Collector2SC2735Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15

2SC2776Silicon NPN Epitaxial PlanarApplication VHF amplifier Mixer, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2776Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 30 mACollector power dissipati

2SC2734Silicon NPN EpitaxialApplication UHF frequency converter Local oscillator, wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2734Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollecto

2SC2732Silicon NPN EpitaxialApplicationUHF frequency converterOutlineMPAK311. Emitter2. Base23. Collector2SC2732Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 150 mWJunction tempera

2SC2736Silicon NPN EpitaxialApplication UHF/VHF frequency converter Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2736Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati

2SC2717 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High GainGpe=33 dB(Typ.)(f =45MHz) G H Good Linearity of hFE BaseEmitter JCollectorA DMillimeter REF.Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 - D 3.30 3.81E

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer CapacitanceCre=0.7pF(typ.) AL Low Noise FigureNF=2.5dB(typ.)(f=100MHz) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2714-R 2SC2714-O 2SC2

2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB(Typ.), 10db(Max.) AL Complements of the 2SA1162 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL Range 70~140 120~240 20

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION With MT-200 package High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=2

JMnic Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbso

JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

2SC2715SOT-23 TRANSISTOR (NPN)FEATURES 1. BASE 2. EMITTER High Power Gain3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC C

2SC2714TRANSISTOR (NPN)SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance:Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -C

2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE 2. EMITTER Low Noise: NF=1 dB (Typ),10dB(MAX) 3. COLLECTOR Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collecto

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2712MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

2SC2703 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High DC Current Gain: hFE=100-320 8.2000.6000.800 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640Symbol Parameter 0.000 Value Units1.6000.3000.350Collector-Ba

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value UnitsParameter VCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO

2SC2715 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

2SC2717(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 2. EMITTER 3. COLLECTOR FeaturesHigh Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 4 V

2SC2712 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Collec

2SC2714 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VDimensions in inches and (millimeters)VEBO Emitter-

2SC2703 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.400 High DC Current Gain: hFE=100-320 8.8000.9001.1000.4000.60013.80014.200 1.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter 0.380 Value Units0.4004.7

2SC2714NPN General Purpose TransistorsP b Lead(Pb)-FreeSOT-23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO VIc=10A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO VIc=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 VCollector cut-o

2SC2715 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. / Applications High frequency a

2SC2717M(BR3DG2717M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FEHigh gain, good linearity of hFE. / Applications TV final picture IF amplifier applications. / Equival

2SC2712 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications Audio frequency genera

SMD Type TransistorsNPN Transistors2SC2716SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=30V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect

SMD Type TransistorsNPN Transistors2SC2735SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC2715SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle

SMD Type TransistorsNPN Transistors2SC2780SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=140V Complementary to 2SA11730.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO

SMD Type TransistorsNPN Transistors2SC2714SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

SMD Type TransistorsNPN Transistors2SC2776SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC2778SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC2712SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max)1 2Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)1.Base2.Emitter3.collector

SMD Type TransistorsNPN Transistors2SC2734SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type TransistorsNPN Transistors2SC2757SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

SMD Type TransistorsNPN Transistors2SC2732SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC2713SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) 1 2+0.050.95+0.1-0.1 0.1 -0.01 Small package1.9+0.1-0.1 Complementary to 2SA11631.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25

SMD Type TransistorsNPN Transistors2SC2736SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

2SC2712LT1 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA(Max.) Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) * High hFE: hFE=70-700 * Low Noise: NF=1dB(Typ.),10dB(Max.) * Complementary to 2SA1162 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

RUMW UMW 2SC2712SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE 3. COLLECTOR Audio Frequency General Purpose Amplifier Applications Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V

2SC2712NPN Transistors321.Base2.Emitter1 3.CollectorFeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23)Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage V

2SC2757TRANSISTOR (NPN)FEATURES SOT-23 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 1BASE 2EMITTER 3COLLECTOR MARKING T33MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5

2SC2714YMAXIMUM RATINGSParameter Symbol Rating UnitGENERAL PURPOSE Collector-Emitter VoltageV 20 V TRANSISTOR NPN SILICON CEO225mW50mA20VCollector-Base VoltageV 30CBOVEmitterBase VoltageV 3.0EBO V3Collector CurrentI 50 mAC31Total Device Dissipation(T =25)A P 225 mWtot21 2Thermal Resistance Junction to AmbientR 556 /W(th)ja

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. 2SC2712 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc -

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2714Small reverse Transfer Capacitance:Cre=0.7pF(typ.)Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 4 VICCollector Current -Continuous 20 mA1. BASECollector

Plastic-Encapsulate TransistorsFEATURES(NPN)2SC2712Low Noise: NF=1 dB (Typ),10dB(MAX)Complementary to 2SA1162MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltage 5 VICCollector Current -Continuous 150 mA1. BASECollector Power Dissipation PC 150 mW2. E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION High Power Gain- : Gp12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2735DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF/VHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SC2791DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC converter applicationsABSOLUTE MAX

isc Silicon NPN Power Transistor 2SC2749DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching industrial useGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SC2738DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, switching regulators, inverters,solenoid and relay drivers applications.ABSOLU

isc Silicon NPN Power Transistor 2SC2752DESCRIPTIONHigh breakdown voltageComplementary to 2SA1156 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2752 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon NPN Power Transistor 2SC2750DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC2768DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2794DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2794 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC2739DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, switching regulators, inverters,solenoid and relay drivers applications.ABSOLU

isc Silicon NPN Power Transistor 2SC2705DESCRIPTIONCollector-Emitter sustaining Voltage: V =150V(Min)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Coll

isc Silicon NPN Power Transistor 2SC2712DESCRIPTIONWith SOT-23 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2788DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2734DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757DESCRIPTIONLow NoiseHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2773DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Product Specificationisc Silicon NPN Power Transistor 2SC2761DESCRIPTIONExcellent Safe Operating AreaHigh voltage,high speed100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSConvertersInvertersSwitching regulatorsMotor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2793DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2736DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF/VHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SC2769DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC2707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SA1147Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC2740DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC2767DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA

isc Silicon NPN Power Transistor 2SC2774DESCRIPTION With MT-200 packageHigh power dissipationHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 2

isc Silicon NPN Power Transistor 2SC2751DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1

isc Silicon NPN Power Transistor 2SC2706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SA1146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RA