Биполярный транзистор 2SC2731 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2731
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 3500 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO117
2SC2731 Datasheet (PDF)
2sc2735.pdf
2SC2735Silicon NPN EpitaxialApplicationUHF/VHF Local oscillator, frequency converterOutlineMPAK311. Emitter2. Base23. Collector2SC2735Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15
2sc2734.pdf
2SC2734Silicon NPN EpitaxialApplication UHF frequency converter Local oscillator, wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2734Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollecto
2sc2732.pdf
2SC2732Silicon NPN EpitaxialApplicationUHF frequency converterOutlineMPAK311. Emitter2. Base23. Collector2SC2732Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 150 mWJunction tempera
2sc2736.pdf
2SC2736Silicon NPN EpitaxialApplication UHF/VHF frequency converter Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2736Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati
2sc2735.pdf
SMD Type TransistorsNPN Transistors2SC2735SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2734.pdf
SMD Type TransistorsNPN Transistors2SC2734SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc2732.pdf
SMD Type TransistorsNPN Transistors2SC2732SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2736.pdf
SMD Type TransistorsNPN Transistors2SC2736SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc2735.pdf
INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2735DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF/VHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
2sc2738.pdf
isc Silicon NPN Power Transistor 2SC2738DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, switching regulators, inverters,solenoid and relay drivers applications.ABSOLU
2sc2739.pdf
isc Silicon NPN Power Transistor 2SC2739DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier, switching regulators, inverters,solenoid and relay drivers applications.ABSOLU
2sc2734.pdf
INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2734DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
2sc2736.pdf
INCHANGE Semiconductorisc Silicon NPN Transistor 2SC2736DESCRIPTIONSilicon NPN epitaxial typeLocal oscillator wide band amplifier100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF/VHF frequency convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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