2SC2774 - описание и поиск аналогов

JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Abso

isc Silicon NPN Power Transistor 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 2

Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Abso

Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Abso

2SC2776 Silicon NPN Epitaxial Planar Application VHF amplifier Mixer, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2776 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power dissipati

JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION With MT-200 package High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=2

SMD Type Transistors NPN Transistors 2SC2776 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type Transistors NPN Transistors 2SC2778 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2773 DESCRIPTION With MT-200 package High power dissipation High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM