Справочник транзисторов. 2SC2775

 

Биполярный транзистор 2SC2775 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2775
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 1.6 pf
   Статический коэффициент передачи тока (hfe): 700
   Корпус транзистора: TO236

 Аналоги (замена) для 2SC2775

 

 

2SC2775 Datasheet (PDF)

 8.1. Size:60K  panasonic
2sc2778 e.pdf

2SC2775
2SC2775

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

 8.2. Size:56K  panasonic
2sc2778.pdf

2SC2775
2SC2775

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

 8.3. Size:24K  hitachi
2sc2776.pdf

2SC2775
2SC2775

2SC2776Silicon NPN Epitaxial PlanarApplication VHF amplifier Mixer, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2776Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 30 mACollector power dissipati

 8.4. Size:191K  jmnic
2sc2773.pdf

2SC2775
2SC2775

JMnic Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION With MT-200 package High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=2

 8.5. Size:165K  jmnic
2sc2774.pdf

2SC2775
2SC2775

JMnic Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbso

 8.6. Size:350K  kexin
2sc2776.pdf

2SC2775

SMD Type TransistorsNPN Transistors2SC2776SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.7. Size:1068K  kexin
2sc2778.pdf

2SC2775
2SC2775

SMD Type TransistorsNPN Transistors2SC2778SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

 8.8. Size:194K  inchange semiconductor
2sc2773.pdf

2SC2775
2SC2775

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2773DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 8.9. Size:223K  inchange semiconductor
2sc2774.pdf

2SC2775
2SC2775

isc Silicon NPN Power Transistor 2SC2774DESCRIPTION With MT-200 packageHigh power dissipationHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for audio power amplifier and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 2

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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