2SC2799. Аналоги и основные параметры
Наименование производителя: 2SC2799
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 770 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: TO128
Аналоги (замена) для 2SC2799
- подборⓘ биполярного транзистора по параметрам
2SC2799 даташит
8.1. Size:105K toshiba
2sc2791.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:211K toshiba
2sc2793.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.5. Size:200K jmnic
2sc2792.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
8.6. Size:189K inchange semiconductor
2sc2791.pdf 
isc Silicon NPN Power Transistor 2SC2791 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications Switching regulator applications High speed DC-DC converter applications ABSOLUTE MAX
8.7. Size:191K inchange semiconductor
2sc2794.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2794 DESCRIPTION High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2794 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.8. Size:189K inchange semiconductor
2sc2793.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2793 DESCRIPTION With MT-200 package High power dissipation High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High speed and high voltage switching applications Switching regulator applications High speed DC-DC con
8.9. Size:166K inchange semiconductor
2sc2792.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1
Другие транзисторы: 2SC2790A, 2SC2791, 2SC2792, 2SC2793, 2SC2794, 2SC2796, 2SC2797, 2SC2798, BC557, 2SC28, 2SC280, 2SC2800, 2SC2802, 2SC2803, 2SC2804, 2SC2805, 2SC2806
