2SC2833A. Аналоги и основные параметры
Наименование производителя: 2SC2833A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: TO218
Аналоги (замена) для 2SC2833A
- подборⓘ биполярного транзистора по параметрам
2SC2833A даташит
..1. Size:91K inchange semiconductor
2sc2833 2sc2833a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
7.2. Size:197K inchange semiconductor
2sc2833.pdf 
isc Silicon NPN Power Transistor 2SC2833 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.1. Size:145K sanyo
2sc2839.pdf 
Ordering number EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit mm slimness of sets. 2033 High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2839] typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Para
8.5. Size:143K jmnic
2sc2830.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION With TO-3 package High voltage ,high speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND
8.6. Size:149K jmnic
2sc2832.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER
8.7. Size:27K sanken-ele
2sc2837.pdf 
LAPT 2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VCB=150V 100max 0.1 A 9.6 2.0 VCEO 150 V A IEBO VEB=5V 100
8.8. Size:273K lge
2sc2839.pdf 
2SC2839 TO-92S Transistor (NPN) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ). MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 30 mA PC Colle
8.9. Size:182K inchange semiconductor
2sc2831.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2831 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.10. Size:118K inchange semiconductor
2sc2832 2sc2832a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 )
8.11. Size:59K inchange semiconductor
2sc2831 2sc2831a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
8.12. Size:190K inchange semiconductor
2sc2830.pdf 
isc Silicon NPN Power Transistor 2SC2830 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching applicat
8.13. Size:202K inchange semiconductor
2sc2837.pdf 
isc Silicon NPN Power Transistor 2SC2837 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
8.14. Size:193K inchange semiconductor
2sc2832.pdf 
isc Silicon NPN Power Transistor 2SC2832 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.15. Size:188K inchange semiconductor
2sc2838.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2838 DESCRIPTION With MT-200 package High power dissipation High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High speed and high voltage switching applications Switching regulator applications High speed DC-DC con
8.16. Size:197K inchange semiconductor
2sc2834.pdf 
isc Silicon NPN Power Transistor 2SC2834 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.17. Size:119K inchange semiconductor
2sc2834 2sc2834a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
Другие транзисторы: 2SC282H, 2SC283, 2SC2830, 2SC2831, 2SC2831A, 2SC2832, 2SC2832A, 2SC2833, 2SC2383, 2SC2834, 2SC2834A, 2SC2837, 2SC2838, 2SC2839, 2SC2839D, 2SC2839E, 2SC2839F
