2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-

2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Switching Applications 33Top View C B1CLASSIFICATION OF hFE (1) 1 22K EProduct-Rank 2SC2859-O 2SC2859-Y 2SC2859-GRRange 70~140 120~240 200~400DMark

2SC2859TRANSISTOR (NPN)SOT23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBOVCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipat

SMD Type TransistorsNPN Transistors2SC2859SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Excellent hFE Linearity:hFE(2)=25(min) (VCE=6V,IC=400mA)1 2+0.05-0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.11.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3