Биполярный транзистор 2SC285A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC285A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 160 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO39
2SC285A Datasheet (PDF)
2sc2859.pdf
2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-
2sc2857.pdf
Ordering number:EN753CNPN Triple Diffused Planar Silicon Transistor2SC2857High-Voltage Driver ApplicationsApplications Package Dimensions Color TV vertical driver, sound driver applications. unit:mm2003AFeatures [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW)JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorE : EmitterSANYO
2sc2851 e.pdf
Transistor2SC2851Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f = 175MHz).0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 36 VCollector to emitter voltage VCEO 16 V+0
2sc2855 2sc2856.pdf
2SC2855, 2SC2856Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2855, 2SC2856Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2855 2SC2856 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to bas
2sc2853 2sc2854.pdf
2SC2853, 2SC2854Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2853, 2SC2854Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2853 2SC2854 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltage
2sc2859.pdf
2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Switching Applications 33Top View C B1CLASSIFICATION OF hFE (1) 1 22K EProduct-Rank 2SC2859-O 2SC2859-Y 2SC2859-GRRange 70~140 120~240 200~400DMark
2sc2859.pdf
2SC2859TRANSISTOR (NPN)SOT23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBOVCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipat
2sc2859.pdf
SMD Type TransistorsNPN Transistors2SC2859SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Excellent hFE Linearity:hFE(2)=25(min) (VCE=6V,IC=400mA)1 2+0.05-0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.11.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050