2SC2860. Аналоги и основные параметры
Наименование производителя: 2SC2860
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 325 MHz
Ёмкость коллекторного перехода (Cc): 0.8 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO236
Аналоги (замена) для 2SC2860
- подборⓘ биполярного транзистора по параметрам
2SC2860 даташит
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf
2sc2883.pdf
2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
2sc2879.pdf
2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 100W PEP Power Gain Gp = 13dB Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS
2sc2878.pdf
2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-b
2sc2884.pdf
2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit mm High DC current gain hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25 C) Characteristics Symbol
2sc2873o 2sc2873y.pdf
2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute
2sc2880.pdf
2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit mm High voltage VCEO = 150 V High transition frequency f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit
2sc2882.pdf
2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit
2sc2824.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2881.pdf
2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = 120 V High transition frequency fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25 C) Cha
2sc2873.pdf
2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213 Maxim
2sc2859.pdf
2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-
2sc2839.pdf
Ordering number EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit mm slimness of sets. 2033 High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2839] typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Para
2sc2812n.pdf
Ordering number ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Package Dimensions Miniature package facilitates miniaturization in end unit mm products. 2204 High breakdown voltage. [2SA1179N / 2SC2812N] 0.42 0.131 3 0 0.1 1 2 0.95 0.95 1.9 1 Base 2.92 2
2sc2857.pdf
Ordering number EN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions Color TV vertical driver, sound driver applications. unit mm 2003A Features [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW) JEDEC TO-92 B Base EIAJ SC-43 C Collector E Emitter SANYO
2sa1179n 2sc2812n.pdf
Ordering number EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) 2SA1179N Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
2sc2814.pdf
Ordering number EN693F NPN Epitaxial Planar Silicon Transistor 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions Very small package enabiling compactness and unit mm slimness of sets. 2018A High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2814] typ). C Collector B Base E Emitter SANYO CP Specifications Absolute Maximu
2sc2885 2sc2946.pdf
DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr
2sc2873-y.pdf
MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See
2sc2883-o.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2881-o 2sc2881-y.pdf
2SC2881-O/2SC2881-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=1mA, IE=0 Collector-Base Breakdown Voltage 120 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 120 V V(BR)EBO IE=1mA, IC=0 Emitter-Base Breakdown Voltage 5.0 V ICBO VCB=120V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=5V, I
2sc2883-y.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability
2sc2881-y.pdf
MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet
2sc2881-o.pdf
MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet
2sc2873-o.pdf
MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See
2sc2851 e.pdf
Transistor 2SC2851 Silicon NPN epitaxial planer type For high-frequency power amplification Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f = 175MHz). 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 36 V Collector to emitter voltage VCEO 16 V +0
2sc2855 2sc2856.pdf
2SC2855, 2SC2856 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2855 2SC2856 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to bas
2sc2898.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc2853 2sc2854.pdf
2SC2853, 2SC2854 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2853, 2SC2854 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2853 2SC2854 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage
2sc2816.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc2899.pdf
2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 0.5 A Collector peak current IC(peak) 1.0
2sc2883.pdf
2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 4 1 2 CLASSIFICATION OF hFE 3 A E C Product-Rank 2SC2883-O 2SC2883-Y Range 100 200 160 320 B D Marking GO GY F G H K J L PACKAGE INFORMATION Millimeter Millimeter REF. REF.
2sc2873.pdf
2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V Millimeter Millimeter VCEO Collector-Emitter Voltage 50 V REF. REF.
2sc2859.pdf
2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity A L Switching Applications 3 3 Top View C B 1 CLASSIFICATION OF hFE (1) 1 2 2 K E Product-Rank 2SC2859-O 2SC2859-Y 2SC2859-GR Range 70 140 120 240 200 400 D Mark
2sc2893.pdf
2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES B E E POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C D J E I F MAXIMUM RATINGS G IC 1.5 A H #8-32 UNC K MINIMUM MAXIMUM VCB 55 V DIM in
2sc2883.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5
2sc2884.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle
2sc2881.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Transition Frequency 3. EMITTER High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol
2sc2810.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION With TO-220C package High voltage,High speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emit
2sc2816.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION With TO-220C package High voltage High speed APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UN
2sc2830.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION With TO-3 package High voltage ,high speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND
2sc2832.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER
2sc2837.pdf
LAPT 2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VCB=150V 100max 0.1 A 9.6 2.0 VCEO 150 V A IEBO VEB=5V 100
2sc2883.pdf
2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp
2sc2884.pdf
2SC2884 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC
2sc2881.pdf
2SC2881 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Transition Frequency High Voltage 3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V
2sc2873.pdf
2SC2873 SOT- 89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Col
2sc2859.pdf
2 SC2859 TRANSISTOR (NPN) SOT 23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO VCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipat
2sc2884.pdf
2SC2884 SOT-89-3L SOT-89-3L Plastic-Encapsulate NPN Transistors 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E
2sc2839.pdf
2SC2839 TO-92S Transistor (NPN) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ). MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 30 mA PC Colle
2sc2883 sot-89.pdf
2SC2883 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage
2sc2881.pdf
WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package 1. BASE High Transition Frequency High Voltage 2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package i
2sc2881.pdf
2SC2881 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , 2SA1201 High fT, high VCEO, small flat package, complementary pair with 2SA1201. / Applications Power amplifier
2sc2883.pdf
SMD Type Transistors NPN Transistors 2SC2883 Features 1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1203 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30
2sc2884.pdf
SMD Type Transistors NPN Transistors 2SC2884 Features 1.70 0.1 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C
2sc2880.pdf
SMD Type Transistors NPN Transistors 2SC2880 1.70 0.1 Features High Voltage VCEO=150V High Transition Frequency Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SA1200 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter
2sc2882.pdf
SMD Type Transistors NPN Transistors 2SC2882 Features 1.70 0.1 Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1202 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sc2881.pdf
SMD Type Transistors NPN Transistors 2SC2881 Features 1.70 0.1 Small Flat Package High Transition Frequency High Voltage 0.42 0.1 Complementary to 2SA1201 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol
2sc2845.pdf
SMD Type Transistors NPN Transistors 2SC2845 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
2sc2873.pdf
SMD Type Transistors NPN Transistors 2SC2873 Features 1.70 0.1 Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage 0.42 0.1 Complementary to 2SA1213 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO
2sc2859.pdf
SMD Type Transistors NPN Transistors 2SC2859 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE Linearity hFE(2)=25(min) (VCE=6V,IC=400mA) 1 2 +0.05 -0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
2sc2873y-g.pdf
General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 BASE 2 0.061(1.55) 2 COLLECTOR REF. 3 EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.
2sc2873o-g.pdf
General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 BASE 2 0.061(1.55) 2 COLLECTOR REF. 3 EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.
2sc2873o 2sc2873y.pdf
2SC2873 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter
2sc2873sq-o 2sc2873sq-y.pdf
2SC2873SQ NPN Transistor Features SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the PNP Transistor 2SA1213SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter Marking Code 2.Collector 2SC2873SQ-O MX 2SC2873SQ-Y MY 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless ot
2sc2873o 2sc2873y.pdf
2SC2873 NPN-Silicon General use Transistors 1W 1.5A 25V 4C 1B 2C 3E Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Colle
2sc2883o 2sc2883y.pdf
2SC2883 NPN-General use transistor 1W 1.5A 30V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 30 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - base
2sc2881o 2sc2881y.pdf
2SC2881 Voltage Amplifier Applications Voltage Amplifier Applications Features High Voltage VCEO = 120V High Transition Frequency fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 2 2SC2881 hFE Classification
2sc2884y.pdf
2SC2884Y NPN-General use transistor 1W 1.5A 25V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 25 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - bas
2sc2873-o 2sc2873-y.pdf
2SC2873 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 High Speed Switching Time 2.Collector Low Collector-emitter saturation voltage 3.Emitter Complementary to 2SA1213 Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VC
2sc2873.pdf
Plastic-Encapsulate Transistors FEATURES 2SC2873 (NPN) Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time PC=1.0 to 2.0W Complementary to 2SA1213 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V 1. BASE Collector-Emitter Voltage VCEO 50 V 2. COLLECTO SOT-89 Emitter-Base
2sc2827.pdf
isc Silicon NPN Power Transistor 2SC2827 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching applicat
2sc2833 2sc2833a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sc2841.pdf
isc Silicon NPN Power Transistor 2SC2841 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
2sc2810.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2810 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc2809.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2809 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc2815.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2815 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sc2898.pdf
isc Silicon NPN Power Transistor 2SC2898 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 4A, I = 0.8A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power swit
2sc2877.pdf
isc Silicon NPN Power Transistor 2SC2877 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1217 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. Suitable for output stage of 5
2sc2831.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2831 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sc2832 2sc2832a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 )
2sc2845.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base
2sc2831 2sc2831a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
2sc2816.pdf
isc Silicon NPN Power Transistor 2SC2816 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
2sc2830.pdf
isc Silicon NPN Power Transistor 2SC2830 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching applicat
2sc2833.pdf
isc Silicon NPN Power Transistor 2SC2833 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc2837.pdf
isc Silicon NPN Power Transistor 2SC2837 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
2sc2899.pdf
isc Silicon NPN Power Transistor 2SC2899 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 0.25A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa
2sc2832.pdf
isc Silicon NPN Power Transistor 2SC2832 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc2838.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2838 DESCRIPTION With MT-200 package High power dissipation High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High speed and high voltage switching applications Switching regulator applications High speed DC-DC con
2sc2834.pdf
isc Silicon NPN Power Transistor 2SC2834 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc2834 2sc2834a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
Другие транзисторы: 2SC2856, 2SC2857, 2SC2858, 2SC2859O, 2SC2859Y, 2SC2859GR, 2SC285A, 2SC286, C5198, 2SC2865, 2SC2865A, 2SC2867, 2SC2868, 2SC2868BL, 2SC2868GR, 2SC2868Y, 2SC2869
History: BFT72
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