2SC2883O - Даташиты. Аналоги. Основные параметры

2SC2883 NPN-General use transistor 1W 1.5A 30V Applications 4 Can be used for switching and amplifying in in various electrical and electronic equipments MAX RATINGS 1 2 3 parameters symbol rating unit SOT-89 collector-emitter voltage IB=0 VCEO 30 V collector-base voltage IE=0 VCBO 40 V 1 Base 2 Collector 3 Collector 3 Emitter emitter - base

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC2883-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC2883-Y Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flammability

2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 4 1 2 CLASSIFICATION OF hFE 3 A E C Product-Rank 2SC2883-O 2SC2883-Y Range 100 200 160 320 B D Marking GO GY F G H K J L PACKAGE INFORMATION Millimeter Millimeter REF. REF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5

2SC2883 TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

2SC2883 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage

SMD Type Transistors NPN Transistors 2SC2883 Features 1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SA1203 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30