2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25C) Characteristics Symbol

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit: mmPower Amplifier Applications High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25C) Cha

DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability

2SC2881-O/2SC2881-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=1mA, IE=0Collector-Base Breakdown Voltage 120 VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 120 VV(BR)EBO IE=1mA, IC=0Emitter-Base Breakdown Voltage 5.0 VICBO VCB=120V, IE=0Collector-Base Cutoff Current 0.1 AIEBO VEB=5V, I

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2SC2883-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC2883-YFax: (818) 701-4939Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flammability

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low Voltage. 412CLASSIFICATION OF hFE 3AECProduct-Rank 2SC2883-O 2SC2883-YRange 100~200 160~320B DMarking GO GYF GH KJ LPACKAGE INFORMATION Millimeter MillimeterREF. REF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2883 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2881 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Transition Frequency 3. EMITTER High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

2SC2883TRANSISTOR (NPN) SOT-89 FEATURES Low voltage 1. BASE 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp

2SC2884 SOT-89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR Complementary to 2SA1204 High DC Current Gain 3. EMITTER APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC

2SC2881 SOT-89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Transition Frequency High Voltage3. EMITTER Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

2SC2884 SOT-89-3L SOT-89-3L Plastic-Encapsulate NPN Transistors 1. BASEFEATURES 2. COLLECTOR Small Flat Package Complementary to 2SA1204 3. EMITTER High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

2SC2883 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48 Low voltage 0.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage

WILLAS2SC2881SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES Small Flat Package1. BASE High Transition Frequency High Voltage2. COLLECTOR 3. EMITTER APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V Pb-Free package i

2SC2881A(BR3DG2881AT) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1201A(BR3CG1201AT)High fT, high VCEO, small flat package, complementary pair with 2SA1201A(BR3CG1201AT). / Applications

2SC2881 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1201 High fT, high VCEO, small flat package, complementary pair with 2SA1201. / Applications Power amplifier

SMD Type TransistorsNPN Transistors2SC2883 Features1.70 0.1 Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12031.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30

SMD Type TransistorsNPN Transistors2SC2884 Features1.70 0.1 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 C

SMD Type TransistorsNPN Transistors2SC28801.70 0.1 Features High Voltage:VCEO=150V High Transition Frequency Small Flat Package0.42 0.10.46 0.1 Complementary to 2SA12001.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emitter

SMD Type TransistorsNPN Transistors2SC2882 Features 1.70 0.1 Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate)0.42 0.10.46 0.1 Complementary to 2SA12021.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC2881 Features1.70 0.1 Small Flat Package High Transition Frequency High Voltage0.42 0.1 Complementary to 2SA1201 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Vol

2SC2883 NPN-General use transistor 1W 1.5A30V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 30 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - base

2SC2881Voltage Amplifier ApplicationsVoltage Amplifier Applications Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 22SC2881hFE Classification

2SC2884Y NPN-General use transistor 1W 1.5A25V Applications 4Can be used for switching and amplifying inin various electrical and electronic equipments MAX RATINGS 1 2 3parameters symbol rating unit SOT-89 collector-emitter voltageIB=0 VCEO 25 V collector-base voltageIE=0 VCBO 40 V 1Base 2Collector 3Collector 3Emitter emitter - bas