2SC2899Silicon NPN Triple DiffusedApplicationHigh speed and high voltage switchingOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 0.5 ACollector peak current IC(peak) 1.0

isc Silicon NPN Power Transistor 2SC2899DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 0.25ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES: B EE POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C DJE IFMAXIMUM RATINGS GIC 1.5 A H#8-32 UNCKMINIMUM MAXIMUMVCB 55 V DIMin

isc Silicon NPN Power Transistor 2SC2898DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 4A, I = 0.8ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswit