2SC2906 - Даташиты. Аналоги. Основные параметры

Ordering number ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter

A A A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO

isc Product Specification isc Silicon NPN Power Transistor 2SC2902 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a