2SC291 - Даташиты. Аналоги. Основные параметры

Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5

Ordering number ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2006B Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 Emi

isc Silicon NPN Power Transistor 2SC2911 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SA1209 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC2913 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a