isc Silicon NPN Power Transistor 2SC2928DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Coll

Transistors2SC2925Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.150.1 0.1Collector-base voltage (Emitter open) VC

Transistor2SC2925Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter vo

LAPT 2SC2921Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V VEB=5V 100max A 2-3.

LAPT 2SC2922Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 180 ICBO VCB=180V 100max AV0.224.42.10.1VCEO 180 IEBO VEB=5V 100m

Complementary NPN-PNP Power Bipolar Transistor R2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltageV =160V (min) CEO CEO NPN-PNP Complementary NPN-

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV Collector-base voltage Open emitter 30

isc Silicon NPN Power Transistor 2SC2921DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1215Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALU

isc Silicon NPN Power Transistor 2SC2920DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorMotor controlsUltrasonic oscillatorsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2929DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2922DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1216Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)