Биполярный транзистор 2SC2929 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2929
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
2SC2929 Datasheet (PDF)
2sc2929.pdf
isc Silicon NPN Power Transistor 2SC2929DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc2925.pdf
Transistors2SC2925Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.150.1 0.1Collector-base voltage (Emitter open) VC
2sc2925 e.pdf
Transistor2SC2925Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter vo
2sc2921.pdf
LAPT 2SC2921Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V VEB=5V 100max A 2-3.
2sc2922.pdf
LAPT 2SC2922Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 180 ICBO VCB=180V 100max AV0.224.42.10.1VCEO 180 IEBO VEB=5V 100m
2sa1215 2sc2921.pdf
Complementary NPN-PNP Power Bipolar Transistor R2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltageV =160V (min) CEO CEO NPN-PNP Complementary NPN-
2sc2927.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.
2sc2923-220f.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sc2923-126.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV Collector-base voltage Open emitter 30
2sc2921.pdf
isc Silicon NPN Power Transistor 2SC2921DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1215Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sc2923.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALU
2sc2920.pdf
isc Silicon NPN Power Transistor 2SC2920DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorMotor controlsUltrasonic oscillatorsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc2928.pdf
isc Silicon NPN Power Transistor 2SC2928DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Coll
2sc2922.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2922DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1216Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050