DATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high voltage current such as TV verticaldeflection (drive and output), audio output, pin cushioncorrection Complementary transistor with 2SA1221 and 2SA1222VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2SA1222/2

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONThe 2SC2954 is an NPN epitaxial silicon transistor disigned forPACKAGE DIMENSIONSlow noise wide band amplifier and buffer amplifier of OSC, for VHF(Unit: mm)and CATV bnad.4.50.1FEATURES1.50.11.60.2 Low Noise and High Gain.f = 200 MHz, 500 MHzNF: 2.3

2SC2952NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2SC2592 is a High FrequencyTransistor Designed for GeneralPurpose VHF-UHF AmplifierApplications.MAXIMUM RATINGSIC 250 mAVCE 30 VPDISS 3.5 W @ TC = 25 OCTJ -65 to +200 OCTSTG -65 to +200 OC1 = Emitter 2 = Base3 & 4 = Collector (Case)50 OC/WJCCHARACTERISTICS TC = 25 OC

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES: POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2954DESCRIPTIONLow Noise and High GainNF = 2.3 dB TYP. ; S 2 = 20 dB TYP.21e@ f = 200 MHzNF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP.21e@ f = 500 MHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise wide band amplifier and bufferamplifie