2SC2970 datasheet, аналоги, основные параметры

Наименование производителя: 2SC2970  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 175 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO3

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2SC2970 даташит

 ..1. Size:179K  inchange semiconductor
 2sc2970.pdf pdf_icon

2SC2970

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2970 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

 8.1. Size:49K  renesas
 2sc2979.pdf pdf_icon

2SC2970

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:194K  inchange semiconductor
 2sc2979.pdf pdf_icon

2SC2970

isc Silicon NPN Power Transistor 2SC2979 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 0.75A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching app

 8.3. Size:179K  inchange semiconductor
 2sc2975.pdf pdf_icon

2SC2970

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2975 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

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Другие транзисторы: 2SC2963, 2SC2964, 2SC2965, 2SC2966, 2SC2967, 2SC2968, 2SC2969, 2SC297, BC546, 2SC2971, 2SC2972, 2SC2973, 2SC2974, 2SC2975, 2SC2976, 2SC2977, 2SC2978