2SC2981 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SC2981 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching applic

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent linearity h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) (I = 2 A, I = 50 mA)

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

SMD Type Transistors NPN Transistors 2SC2982 Features 1.70 0.1 Low saturation voltage Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volta

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION With TO-3PN package Complement to type 2SA1227 High power dissipation APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abso

isc Silicon NPN Power Transistor 2SC2983 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and driver stage amplifier applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a