Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION With TO-3PN package Complement to type 2SA1227 High power dissipation APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbso

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent linearity : h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage : V = 0.5 V (max) (I = 2 A, I = 50 mA)

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-ba

2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1

2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

SMD Type TransistorsNPN Transistors2SC2982 Features1.70 0.1 Low saturation voltage Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volta

isc Silicon NPN Power Transistor 2SC2981DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 2ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswitching applic

isc Silicon NPN Power Transistor 2SC2983DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and driver stage amplifierapplications .ABSOLUTE MAXIMUM RATINGS(T =25)a