isc Silicon NPN Power Transistor 2SC3012DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1232Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION With TO-3PN package Complement to type 2SA1232 High transition frequency APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm High gain: |S21e|2 = 12dB (typ.) Low noise figure: NF = 2.3dB (typ.), f = 1 GHz High fT: f = 6.5 GHz TMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 7

SMD Type TransistorsNPN Transistors2SC3011SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec