Биполярный транзистор 2SC3037 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3037
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2500 MHz
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: TO92
2SC3037 Datasheet (PDF)
2sc3039.pdf
Ordering number:EN996BNPN Triple Diffused Planar Silicon Transistor2SC3039400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3039]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
2sc3038.pdf
Ordering number:EN949BNPN Triple Diffused Planar Silicon Transistor2SC3038400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3038]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
2sc3030.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3032.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC3032DESCRIPTIONLow Collector Saturation VoltageLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose app
2sc3039.pdf
isc Silicon NPN Power Transistor 2SC3039DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3038.pdf
isc Silicon NPN Power Transistor 2SC3038DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC2546
