Справочник транзисторов. 2SC3062

 

Биполярный транзистор 2SC3062 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3062
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимальный постоянный ток коллектора (Ic): 0.065 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 4000 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: TO131

 Аналоги (замена) для 2SC3062

 

 

2SC3062 Datasheet (PDF)

 8.1. Size:86K  sanyo
2sc3069.pdf

2SC3062
2SC3062

Ordering number:EN934GNPN Epitaxial Planar Silicon Transistor2SC3069High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3069]Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat)=0.

 8.2. Size:139K  sanyo
2sc3067.pdf

2SC3062
2SC3062

 8.3. Size:374K  sanyo
2sc3064.pdf

2SC3062
2SC3062

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:94K  sanyo
2sc3066.pdf

2SC3062
2SC3062

 8.5. Size:85K  sanyo
2sc3068.pdf

2SC3062
2SC3062

Ordering number:EN943GNPN Epitaxial Planar Silicon Transistor2SC3068High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3068]Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter sat

 8.6. Size:63K  panasonic
2sc3063.pdf

2SC3062
2SC3062

Power Transistors2SC3063Silicon NPN triple diffusion planar typeUnit: mmFor TV video output amplification8.0+0.50.13.20.2 3.160.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter S

 8.7. Size:640K  fuji
2sc3059 2sc3060 2sc3061 2sc3178.pdf

2SC3062
2SC3062

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.8. Size:170K  jmnic
2sc3063.pdf

2SC3062
2SC3062

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNINGsee Fig.2 PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 300 V VCEO Col

 8.9. Size:213K  foshan
2sc3063 3da3063.pdf

2SC3062
2SC3062

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR : Purpose: Video output amplifier. :, Features: High V , low C . CEO ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

 8.10. Size:191K  inchange semiconductor
2sc3063.pdf

2SC3062
2SC3062

isc Silicon NPN Power Transistor 2SC3063DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV video output amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.11. Size:190K  inchange semiconductor
2sc3060.pdf

2SC3062
2SC3062

isc Silicon NPN Power Transistor 2SC3060DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit

 8.12. Size:190K  inchange semiconductor
2sc3061.pdf

2SC3062
2SC3062

isc Silicon NPN Power Transistor 2SC3061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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