2SC3068 - Даташиты. Аналоги. Основные параметры

Ordering number:EN943GNPN Epitaxial Planar Silicon Transistor2SC3068High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3068]Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter sat

Ordering number:EN934GNPN Epitaxial Planar Silicon Transistor2SC3069High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3069]Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat)=0.

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Power Transistors2SC3063Silicon NPN triple diffusion planar typeUnit: mmFor TV video output amplification8.0+0.50.13.20.2 3.160.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter S

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNINGsee Fig.2 PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 300 V VCEO Col

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR : Purpose: Video output amplifier. :, Features: High V , low C . CEO ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

isc Silicon NPN Power Transistor 2SC3063DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV video output amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC3060DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit

isc Silicon NPN Power Transistor 2SC3061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit