2SC3071 - описание и поиск аналогов

Ordering number EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006B [2SC3071] Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector

2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25

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2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Col

2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa

Ordering number EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006A [2SC3070] Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e

Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High power gain PG. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to

DIP Type Transistors NPN Transistors 2SC3074 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SA1244 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-251(IPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3076 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.5V (Max.)@ I = 1A CE(sat) C Complementary to 2SA1241 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application Power switching application ABSOLUTE MAXIMUM RATINGS(T =25