2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCol

DIP Type TransistorsNPN Transistors2SC3074TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SA12441 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V

isc Silicon NPN Power Transistor 2SC3074DESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SA1244Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high curr

isc Silicon NPN Power Transistor 2SC3074DESCRIPTIONWith TO-251(IPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SA1244Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high curr