Биполярный транзистор 2SC3084
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3084
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 70
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO3
Аналоги (замена) для 2SC3084
2SC3084
Datasheet (PDF)
8.4. Size:93K sanyo
2sc3087.pdf 
Ordering number:EN1011BNPN Triple Diffused Planar Silicon Transistor2SC3087500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3087]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
8.5. Size:96K sanyo
2sc3086.pdf 
Ordering number:EN1010BNPN Triple Diffused Planar Silicon Transistor2SC3086500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3086]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
8.6. Size:94K sanyo
2sc3088.pdf 
Ordering number:EN1017BNPN Triple Diffused Planar Silicon Transistor2SC3088500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3088]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.7. Size:98K sanyo
2sc3083.pdf 
Ordering number:EN947BNPN Triple Diffused Planar Silicon Transistor2SC3083400V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3083]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit
8.8. Size:96K sanyo
2sc3089.pdf 
Ordering number:EN1012ANPN Triple Diffused Planar Silicon Transistor2SC3089500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3089]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.10. Size:235K jmnic
2sc3083.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO500V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.11. Size:220K jmnic
2sc3089.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.12. Size:193K inchange semiconductor
2sc3085.pdf 
isc Silicon NPN Power Transistor 2SC3085DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.13. Size:195K inchange semiconductor
2sc3087.pdf 
isc Silicon NPN Power Transistor 2SC3087DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.14. Size:216K inchange semiconductor
2sc3086.pdf 
isc Silicon NPN Power Transistor 2SC3086DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.15. Size:202K inchange semiconductor
2sc3088.pdf 
isc Silicon NPN Power Transistor 2SC3088DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.16. Size:220K inchange semiconductor
2sc3083.pdf 
isc Silicon NPN Power Transistor 2SC3083DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.17. Size:202K inchange semiconductor
2sc3089.pdf 
isc Silicon NPN Power Transistor 2SC3089DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
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