Биполярный транзистор 2SC3116
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3116
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-база (Ucb): 180
V
Макcимальный постоянный ток коллектора (Ic): 0.7
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 120
MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
TO126
Аналоги (замена) для 2SC3116
2SC3116
Datasheet (PDF)
..1. Size:47K sanyo
2sa1248 2sc3116.pdf 
Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co
8.1. Size:266K toshiba
2sc3113.pdf 
2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: h = 600~3600 FE High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V
8.2. Size:257K toshiba
2sc3112.pdf 
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: hFE = 600~3600 High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 VCollect
8.3. Size:41K sanyo
2sa1249 2sc3117.pdf 
Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32
8.4. Size:41K sanyo
2sa1246 2sc3114 2sc3114.pdf 
Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim
8.6. Size:197K jmnic
2sc3117.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
8.7. Size:162K inchange semiconductor
2sc3117.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
8.8. Size:63K inchange semiconductor
2sc3110.pdf 
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emit
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