2SC3117 - описание и поиск аналогов

Ordering number ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1249/2SC3117] 8.0 High breakdown voltage. 2.7 4.0 Large current capacity. Adoption of MBIT process. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2

JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m

2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit mm High DC current gain h = 600 3600 FE High breakdown voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit mm High DC current gain hFE = 600 3600 High breakdown voltage V = 50 V CEO High collector current I = 150 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collect

Ordering number ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1248/2SC3116] High breakdown voltage. 8.0 2.7 4.0 Large current capacity. Using MBIT process 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Co

Ordering number ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter 2 Collector ( ) 2SA1246 3 Base 1.3 1.3 SANYO NP Specifications Absolute Maxim

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emit