Биполярный транзистор 2SC3117 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3117
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: TO126
2SC3117 Datasheet (PDF)
2sa1249 2sc3117.pdf
Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32
2sc3117.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
2sc3117.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
2sc3113.pdf
2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: h = 600~3600 FE High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V
2sc3112.pdf
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: hFE = 600~3600 High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 VCollect
2sa1248 2sc3116.pdf
Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co
2sa1246 2sc3114 2sc3114.pdf
Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim
2sc3110.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emit
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MBT35200 | 2S043 | PBLS4003D
History: MBT35200 | 2S043 | PBLS4003D
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050