Биполярный транзистор 2SC3255Q - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3255Q
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO220
2SC3255Q Datasheet (PDF)
2sc3255.pdf
Ordering number:EN1201CPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit). Power amp (high power car stereo, motor controller
2sc3255.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3255DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifi
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf
2sc3257.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3258.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3254.pdf
Ordering number:EN1200CPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit). Power amp (high power car stereo, motor controller)
2sc3253.pdf
Ordering number:EN1199CPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit). Power amp (high power car stereo, motor controller)
2sc3256.pdf
Ordering number:EN2370PNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022 Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit). Power amp (high-power care stereo, motor control).
2sc3254.pdf
isc Silicon NPN Power Transistor 2SC3254DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1290Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
2sc3257.pdf
isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc3258.pdf
isc Silicon NPN Power Transistor 2SC3258DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1293Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sc3250.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3250DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
2sc3252.pdf
isc Silicon NPN Power Transistor 2SC3252DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1288Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
2sc3253.pdf
isc Silicon NPN Power Transistor 2SC3253DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1289Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
2sc3256.pdf
isc Silicon NPN Power Transistor 2SC3256DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050