Биполярный транзистор 2SC3255R
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3255R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO220
Аналоги (замена) для 2SC3255R
2SC3255R
Datasheet (PDF)
7.1. Size:103K sanyo
2sc3255.pdf Ordering number:EN1201CPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit). Power amp (high power car stereo, motor controller
7.2. Size:216K inchange semiconductor
2sc3255.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3255DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifi
8.2. Size:140K toshiba
2sc3257.pdf This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:136K toshiba
2sc3258.pdf This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:103K sanyo
2sc3254.pdf Ordering number:EN1200CPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit). Power amp (high power car stereo, motor controller)
8.5. Size:104K sanyo
2sc3253.pdf Ordering number:EN1199CPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit). Power amp (high power car stereo, motor controller)
8.6. Size:98K sanyo
2sc3256.pdf Ordering number:EN2370PNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022 Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit). Power amp (high-power care stereo, motor control).
8.7. Size:199K inchange semiconductor
2sc3254.pdf isc Silicon NPN Power Transistor 2SC3254DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1290Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.8. Size:192K inchange semiconductor
2sc3257.pdf isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.9. Size:199K inchange semiconductor
2sc3258.pdf isc Silicon NPN Power Transistor 2SC3258DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1293Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.10. Size:183K inchange semiconductor
2sc3250.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3250DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
8.11. Size:198K inchange semiconductor
2sc3252.pdf isc Silicon NPN Power Transistor 2SC3252DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1288Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.12. Size:198K inchange semiconductor
2sc3253.pdf isc Silicon NPN Power Transistor 2SC3253DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1289Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.13. Size:203K inchange semiconductor
2sc3256.pdf isc Silicon NPN Power Transistor 2SC3256DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
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