LAPT 2SC3264Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 230 ICBO VCB=230V 100max AV0.224.42.10.12-3.2VCEO 230 IEBO VEB

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-

isc Silicon NPN Power Transistor 2SC3264DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1295Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: V = 0.4 V (max) CE (sat)(I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta == 25C) ==Characteristics Symbol

2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications Unit: mm NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) NF = 2dB, |S |2 = 9.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCEO 12 VEmitter-base vol

2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 20

2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 20

MCCTM Micro Commercial Components2SC3265-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3265-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

MCCTM Micro Commercial Components2SC3265-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3265-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

LAPT 2SC3263Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.1VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0IEBOVCEO 230 V VEB=5V 100max

SMD Type TransistorsNPN Transistors 2SC3265SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High DC current gain Low saturation voltage1 2+0.1 Complementary to 2SA1298 +0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll

SMD Type TransistorsNPN Transistors2SC3268SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

RUMW UMW 2SC3265SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC3265 TRANSISTOR (NPN)FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collec

2SC3265 SMD Ty p e TransistorsNPN Transistors321.Base2.Emitter Features1 3.Collector High DC current gain Simplified outline(SOT-23) Low saturation voltage Complementary to 2SA1298 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5

isc Silicon NPN Power Transistor 2SC3263DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1294Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU