JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB

isc Silicon NPN Power Transistor 2SC3296TDESCRIPTIONTCollector-Emitter Breakdown Voltage-: VB B= 150V(Min)(BR)CEOComplement to Type 2SA1304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationTAPPLICATIONSTPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITVB

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

Ordering number:EN1332ANPN Planar Type Silicon Darlington Transistor2SC3292For General-Purpose DriversApplications Package Dimensions Especially suited for use in switching of L loadunit:mmmotor driver, printer hammer driver, relay driver, etc.2010C[2SC3292]Features High DC current gain. Large current capacity and wide ASO. Contains 6010V Zener diode betw

Ordering number:EN1333CNPN Planar Silicon Darlington Transistor2SC3293Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3293]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand b

Ordering number:EN1422CNPN Planar Silicon Transistor2SC3294Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3294]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand base. U

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

SMD Type TransistorsNPN Transistors2SC3295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

isc Silicon NPN Power Transistors 2SC3298/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298A= 200V(Min)-2SC3298BComplement to Type 2SA1306/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3299DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1307Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistors 2SC3298BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOComplement to Type 2SA1306BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYM

isc Silicon NPN Power Transistor 2SC3298 A BDESCRIPTIONWith TO-220F packagingComplement to Type 2SA1306 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC3298 160V Collector-Base Voltage 2

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC3298/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298AComplement to Type 2SA1306/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifie

isc Silicon NPN Power Transistor 2SC3297DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1305Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio, car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(