2SC32M - описание и поиск аналогов

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE (1) = 100 320 Low saturation voltage V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol

2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF UHF Band Low Noise Amplifier Applications Unit mm NF = 1.7dB, S21e 2 = 15.0dB (f = 500 MHz) NF = 2dB, S 2 = 9.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base vol

2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I = 2 A) C Complementary to 2SA1296 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20

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2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.0 s (max), (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

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2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) CE (sat) (I = 2 A, I = 5

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V

2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) @I = 2 A C Complementary to 2SA1297 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20

Ordering number EN1200C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1290/2SC3254] lighting circuit). Power amp (high power car stereo, motor controller)

Ordering number EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications Package Dimensions Especially suited for use in switching of L load unit mm motor driver, printer hammer driver, relay driver, etc. 2010C [2SC3292] Features High DC current gain. Large current capacity and wide ASO. Contains 60 10V Zener diode betw

Ordering number EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high current. unit mm Wide ASO. 2022A Fast switching speed. [2SC3277] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN1201C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1291/2SC3255] lighting circuit). Power amp (high power car stereo, motor controller

Ordering number EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3293] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and b

Ordering number EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3294] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and base. U

Ordering number EN1199C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010B Inverters, converters (strobo, flash, fluorescent lamp [2SA1289/2SC3253] lighting circuit). Power amp (high power car stereo, motor controller)

Ordering number EN2370 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1292/2SC3256 60V/15A High-Speed Switching Applications Applications Package Dimensions Various inductance, lamp drivers for electrical unit mm equipment. 2022 Inverters, converters (strobo, flash, fluorescent lamp [2SA1292/2SC3256] lighting circuit). Power amp (high-power care stereo, motor control).

2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.3

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E

MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E

MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Power switching application Complementary to 2SA1298 Purpose Amplifier Low f

A A A

2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC32

2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES High DC current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR 3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal device Z Z=Ra

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC3243 TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM 0.9 W (Tamb=25 ) 3. BASE Collector current ICM 1 A Collector-base voltage 123 V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150

JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA

JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION With TO-3PL package Complement to type 2SA1302 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

LAPT 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0 IEBO VCEO 230 V VEB=5V 100max

LAPT 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 230 ICBO VCB=230V 100max A V 0.2 24.4 2.1 0.1 2- 3.2 VCEO 230 IEBO VEB

LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 150 ICBO VCB=150V 100max A 9.6 2.0 V VCEO 150 IEBO VEB=5V 100max

2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-

SMD Type Transistors NPN Transistors 2SC3265 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC current gain Low saturation voltage 1 2 +0.1 Complementary to 2SA1298 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll

SMD Type Transistors NPN Transistors 2SC3268 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SC3295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. Features High DC current gain and excellent h linearity, low saturation voltage. FE /Absolute maximum ratings(Ta=25 ) Symbol

R UMW UMW 2SC3265 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

2SC3265 SMD Ty p e Transistors NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High DC current gain Simplified outline(SOT-23) Low saturation voltage Complementary to 2SA1298 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5

isc Silicon NPN Power Transistor 2SC3263 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1294 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3235 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3280 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 8A CE(sat) C Complement to Type 2SA1301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity au

isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3254 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1290 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato

isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV chroma output and video signal amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC3277 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif

isc Silicon NPN Power Transistor 2SC3257 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Large Current Capability High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3255 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifi

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC3258 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max.)@ I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1293 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3299 DESCRIPTION Collector-Emitter Breakdown Voltage V = 50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1307 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT Collector-Emitter Breakdown Voltage- VB B= 150V(Min) (BR)CEO Complement to Type 2SA1304 Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3250 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 300V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and genera

isc Silicon NPN Power Transistor 2SC3285 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Speed Switching Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Large safe operating area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistors 2SC3298B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA1306B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM

isc Silicon NPN Power Transistor 2SC3252 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1288 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3229 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1295 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3298 A B DESCRIPTION With TO-220F packaging Complement to Type 2SA1306 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC3298 160 V Collector-Base Voltage 2

isc Silicon NPN Power Transistor 2SC3253 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1289 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3298/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A Complement to Type 2SA1306/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifie

isc Silicon NPN Power Transistor 2SC3281 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fid

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA

isc Silicon NPN Power Transistor 2SC3230 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2SC3256 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed Complement to Type 2SA1292 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifier Switching regulato

isc Silicon NPN Power Transistor 2SC3297 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1305 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Power Transistor 2SC3223 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 10A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supply and general purpose power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3284 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1303 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU