2SC33 - описание и поиск аналогов

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = 250 V Low C 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm AEC-Q101 Qualified (Note1). High emitter-base voltage V = 25 V EBO High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain h = 200 to 1200 F

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2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage V = 50 V (min) CEO Complementary to 2SA1313 Small package Maximum Ratings (Ta =

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Abs

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolu

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit mm Recommended for The First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit mm DC-DC Converter Applications Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Col

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra

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Ordering number EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC TO-92 B Base ( ) 2SA1391 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Rating

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Ordering number EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp. 2003A [2SA1392/2SC3383] JEDEC TO-92 B Base ( ) 2SA1392 EIAJ SC-43 C Collector SANYO NF E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin

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Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo

Ordering number EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions Very small-sized package permitting sets to be small- unit mm sized, slim. 2033 High breakdown voltage VCEO=( )50V. [2SA1339/2SC3393] Complementary pair transistor having large current capacity and high fT. Adoption o

Ordering number EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO=( )50V. 2018A Large current capacitiy and high fT. [2SA1338/2SC3392] Very small-sized package permitting sets to be small- sized, slim. Switching Time Test

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES Low noise and high gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE =

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit mm) low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5 0.1 1.5 0.1 1.6 0.2 FEATURES Low Noise and High Gain NF = 1.1 dB TYP.,

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES Low Noise and High G

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES 1 * Low Noise and High Gain * High Power Gain TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3355L-T92-B 2SC3355G-T92-B TO-92 B E C Tape Box 2SC3355L-T92-K 2SC3355G-T92-K TO-92 B E C Bulk

UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3 2 2 DESCRIPTION 1 1 The UTC 2SC3356 is designed for such applications as DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59) peripheral drivers, Driver in low supply voltage applications (e.g. lamps an

FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC3380 Silicon NPN Triple Diffused Application High frequency high voltage amplifier High voltage switch Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collec

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector

2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3391 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 20

2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipa

2SC3390 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3390 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissip

2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 10 A Collector

2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7V Collector current IC 5A Collector peak curre

A A A

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3356 TRANSISTOR (NPN) SOT 23 FEATURES Low Noise and High Gain High Power Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 20 V CBO 3. COLLECTOR V Collector-Emitter Voltage 12 V CEO V Emitter-Bas

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM 0.2 W (Tamb=25 ) Collector current 1. BASE ICM 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO 20 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc C

2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC

2SC3356 Silicon Epitaxial Planar Transistor A SOT-23 Dim Min Max FEATURES A 2.70 3.10 E Low noise and high gain. B 1.10 1.50 K B NF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical @VCE=10V,IC=7mA, f=1.0GHz D 0.4 Typical E 0.35 0.48 J High power gain. MAG=13dB TYP. D G 1.80 2.00 @VCE=10V,IC=20mA,f=1.0GHz. G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIONS C All Dime

2SC3356 High-Frequency Amplifier Transistor 3 NPN Silicon 1 P b Lead(Pb)-Free 2 FEATURES 1. BASE * Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER 3. COLLECTOR * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emi

2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Capable of being used in the low frequency to hi

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

RoHS RoHS 2SC3320B SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 15A/400V/150W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage, VCBO Satisfactory linearity of fow

SMD Type Transistors NPN Transistors 2SC3361 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Fast switching speed. 1 2 High breakdown voltage. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1331 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60

SMD Type Transistors NPN Transistors 2SC3380 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SC3357 1.70 0.1 Features Low noise and high gain High power gain Large Ptot 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti

SMD Type Transistors NPN Transistors 2SC3360 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO=200V 1 2 High DC Current Gain hFE=90 to 450 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complementary to 2SA1330 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type Transistors NPN Transistors 2SC3397 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 Complementary to 2SA1343 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors NPN Transistors 2SC3325 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = 50 V (min) Small package 1 2 Complementary to 2SA1313 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co

SMD Type Transistors NPN Transistors 2SC3392 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High breakdown voltage Large current capacitiy and high fT. 1 2 High-Speed Switching Applications +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 Complementary to 2SA1338 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symb

SMD Type Transistors NPN Transistors 2SC3324 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=120V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 Complementary to 2SA1312 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3398 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1-0.01 Complementary to 2SA1344 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3338 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SC3396 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1342 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3395 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 Complementary to 2SA1341 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3326 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

SMD Type Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 2 High power gain. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Rating

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-Free Packages & Pin Assignments GST2SC3356F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Informati

2SC3356 NPN 2SC3356 NPN SOT-23 VHF UHF CATV S21e 2 12dB @ VCE=10

2SC3357 NPN 2SC3357 NPN SOT-89 VHF UHF CATV S21e 2 10 dB @ VCE=10V

2SC3356 NPN Silicon Epitaxial Transistor Features Low noise and high gain. NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHz High power gain. MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHz hFE Classification Marking R25 Pb Rank S hFE 120 220 Lead-free SOT-23 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector

2SC3356-R25 Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C

2SC3357 SMD Ty p e NPN Transistors 3 Features 2 Low noise and high gain 1 1.Base High power gain 2.Collector Large Ptot 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Contin

2SC3356 NPN Transistors 3 Features 2 Low noise and high gain. 1. Gate NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 2. Source 1 3. Drain High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Simplified outline(SOT23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter

2SC3356S NPN N RF TRA N SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise trans Silicon epitax process. xial bipolar p H gain, low no High power g oise figure, hi c range and ideal current characteris igh dynamic n stics, 2 SOT-23 chip package, mai p inly used in VHF, UHF and CATV hi cy wideband amplifier. igh frequenc d low noise a 1 SOT-23

NPN SILICON RF TRANSISTOR Feature High gain S21e 2 TYP. Value is 10dB @ VCE=10V IC=20mA f=1GHz Low noise NF TYP. Value is 1.7dB @ VCE=10V IC=7mA f=1GHz fT (TYP.) TYP. Value is 6.5GHz @ VCE=10V IC=20mA f=1GHz PIN DEFINITION 1 Collector 3 Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM

2SC3356 TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High transition frequency Small rbb Cc and high gain. Small NF. ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collec

2SC3320T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SC3356 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO Vdc 3.0 Colle

2SC3357 NPN Silicon RF Transistor FEATURES Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C APPLICATIONS SOT-89 Designed for low noise amplifier at VHF, UHF and CATV band. MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammabil

2SC3356 BIPOLAR TRANSISTOR (NPN) FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount device SOT-23 MECHANICAL DATA Case SOT- 23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbo

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

2SC3356 (NPN) High-Frequency Amplifier Transistor 1 TO-92 3 FEATURES 2 * SOT23 1 Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA 3 * High power gain. 2 1 MAG=13dB Typ.@Vce=10V,Ic=20mA f=1.0 GHz SOT-23-3L 3 2 1 SOT-523 1 B 2 E 3 C

isc Silicon NPN Power Transistor 2SC3388 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3306 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applicat

isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION Low Noise NF = 1.5dB TYP @ VCE=10V IC=7mA f=1GHz High Power Gain S21e 2 = 9.5dB TYP @ VCE=10V IC=20mA f=1GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV b

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

isc Silicon NPN Power Transistor 2SC3352 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3309 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistors 2SC3346 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C High Speed Switching Time t = 1.0 s stg Complement to Type 2SA1329 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC3318 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3336 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3345 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C High Speed Switching Time ; t = 1.0 s stg Complement to Type 2SA1328 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

isc Silicon NPN Power Transistor 2SC3353A DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3307 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M

isc Silicon NPN Power Transistor 2SC3387 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

isc Silicon NPN Power Transistor 2SC3353 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3317 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION Collector-Emiiter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

isc Silicon NPN Power Transistor 2SC3365 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3303 DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 8A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL P

isc Silicon NPN Power Transistor 2SC3320 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 11 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 13 dB TYP. @V = 10 V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at

isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE

isc Silicon NPN Power Transistor 2SC3310 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a