Справочник транзисторов. 2SC3301

 

Биполярный транзистор 2SC3301 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3301
   Маркировка: MA
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 7 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.08 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 7000 MHz
   Ёмкость коллекторного перехода (Cc): 1.4 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SC3301

 

 

2SC3301 Datasheet (PDF)

 8.1. Size:245K  1
2sc3308.pdf

2SC3301
2SC3301

 8.2. Size:227K  toshiba
2sc3306.pdf

2SC3301
2SC3301

 8.3. Size:133K  toshiba
2sc3309.pdf

2SC3301
2SC3301

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:218K  toshiba
2sc3307.pdf

2SC3301
2SC3301

 8.5. Size:167K  toshiba
2sc3303.pdf

2SC3301
2SC3301

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit: mmDC-DC Converter Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol

 8.6. Size:1637K  toshiba
2sc3302.pdf

2SC3301
2SC3301

 8.7. Size:162K  mospec
2sc3306.pdf

2SC3301
2SC3301

AAA

 8.8. Size:509K  jiangsu
2sc3303.pdf

2SC3301
2SC3301

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag

 8.9. Size:173K  cn sptech
2sc3300.pdf

2SC3301
2SC3301

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.10. Size:211K  inchange semiconductor
2sc3306.pdf

2SC3301
2SC3301

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3306DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter applicat

 8.11. Size:196K  inchange semiconductor
2sc3309.pdf

2SC3301
2SC3301

isc Silicon NPN Power Transistor 2SC3309DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 8.12. Size:217K  inchange semiconductor
2sc3307.pdf

2SC3301
2SC3301

isc Silicon NPN Power Transistor 2SC3307DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M

 8.13. Size:218K  inchange semiconductor
2sc3303.pdf

2SC3301
2SC3301

isc Silicon NPN Power Transistor 2SC3303DESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.14. Size:197K  inchange semiconductor
2sc3300.pdf

2SC3301
2SC3301

isc Silicon NPN Power Transistor 2SC3300DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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