2SC3301. Аналоги и основные параметры
Наименование производителя: 2SC3301
Маркировка: MA
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 7 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.08 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 7000 MHz
Ёмкость коллекторного перехода (Cc): 1.4 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: SOT89
Аналоги (замена) для 2SC3301
- подборⓘ биполярного транзистора по параметрам
2SC3301 даташит
8.3. Size:133K toshiba
2sc3309.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.5. Size:167K toshiba
2sc3303.pdf 
2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit mm DC-DC Converter Applications Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time tstg = 1.0 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Col
8.8. Size:509K jiangsu
2sc3303.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low Collector Saturation Voltage High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltag
8.9. Size:173K cn sptech
2sc3300.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.10. Size:211K inchange semiconductor
2sc3306.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3306 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applicat
8.11. Size:196K inchange semiconductor
2sc3309.pdf 
isc Silicon NPN Power Transistor 2SC3309 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.12. Size:217K inchange semiconductor
2sc3307.pdf 
isc Silicon NPN Power Transistor 2SC3307 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M
8.13. Size:218K inchange semiconductor
2sc3303.pdf 
isc Silicon NPN Power Transistor 2SC3303 DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.14. Size:197K inchange semiconductor
2sc3300.pdf 
isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE
Другие транзисторы: 2SC3299, 2SC3299O, 2SC3299Y, 2SC32A, 2SC32M, 2SC33, 2SC330, 2SC3300, B772, 2SC3302, 2SC3303, 2SC3303O, 2SC3303Y, 2SC3304, 2SC3305, 2SC3306, 2SC3307
