2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 F

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: V = 50 V (min) CEO Complementary to 2SA1313 Small package Maximum Ratings (Ta =

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Abs

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolu

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for The First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SC3325 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC3322Silicon NPN Tirple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base 2. Collector (Flange) 3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 900 VCollector to emitter voltage VCEO 800 VEmitter to base voltage VEBO 7VCollector current IC 5ACollector peak curre

RoHS RoHS 2SC3320BSEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)15A/400V/150W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4High-speed switchingB C EHigh collector to base voltage, VCBOSatisfactory linearity of fow

SMD Type TransistorsNPN Transistors2SC3325SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High voltage: VCEO = 50 V (min) Small package1 2 Complementary to 2SA1313+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Co

SMD Type TransistorsNPN Transistors2SC3324SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=120V+0.1+0.050.95 -0.1 0.1-0.01+0.1 Complementary to 2SA1312 1.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC3326SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

2SC3320T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION With TO-3P(I) package High voltage High speed APPLICATIONS High power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL P

isc Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI