Биполярный транзистор 2SC3382S
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3382S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.4
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Ёмкость коллекторного перехода (Cc): 2.7
pf
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора:
TO92
Аналоги (замена) для 2SC3382S
2SC3382S
Datasheet (PDF)
7.1. Size:236K sanyo
2sa1391 2sc3382.pdf 
Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating
8.2. Size:173K sanyo
2sa1392 2sc3383.pdf 
Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
8.3. Size:76K renesas
rej03g0713 2sc3380ds-1.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:29K hitachi
2sc3380.pdf 
2SC3380Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier High voltage switchOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC3380Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollec
8.6. Size:856K kexin
2sc3380.pdf 
SMD Type TransistorsNPN Transistors2SC3380SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag
8.7. Size:188K inchange semiconductor
2sc3388.pdf 
isc Silicon NPN Power Transistor 2SC3388DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
8.8. Size:197K inchange semiconductor
2sc3387.pdf 
isc Silicon NPN Power Transistor 2SC3387DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
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