2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

isc Silicon NPN Power Transistor 2SC3421DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOComplement to Type 2SA1358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for driver of 60 to 80 Watts audio amplifier.ABSOLUTE MAXIMUM RATI

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCE

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitt

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum rat

2SC3420 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, High DC current gain, low saturation voltage,high collector power dissipation. / Applications ,

SMD Type TransistorsNPN Transistors2SC3429SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose: Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FEFeatures: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma

isc Silicon NPN Power Transistor 2SC3424DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V (Min)(BR)CEOComplement to Type 2SA1361Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

isc Silicon NPN Power Transistor 2SC3423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOComplement to Type 2SA1360Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3420DESCRIPTIONHigh Collector Current-I = 5.0ACDC Current Gain-: h = 70(Min)@I = 4AFE CLow Saturation Voltage: V = 1.0V(Max)@I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Medium power amplifier applications.

isc Silicon NPN Power Transistor 2SC3422DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 40V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierLow speed switchingSuitable for output stage of 5 watts car radio and car stere