2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitt

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

isc Silicon NPN Power Transistor 2SC3423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOComplement to Type 2SA1360Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCE

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum rat

2SC3420 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, High DC current gain, low saturation voltage,high collector power dissipation. / Applications ,

SMD Type TransistorsNPN Transistors2SC3429SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose: Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FEFeatures: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma

isc Silicon NPN Power Transistor 2SC3424DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V (Min)(BR)CEOComplement to Type 2SA1361Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3420DESCRIPTIONHigh Collector Current-I = 5.0ACDC Current Gain-: h = 70(Min)@I = 4AFE CLow Saturation Voltage: V = 1.0V(Max)@I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Medium power amplifier applications.

isc Silicon NPN Power Transistor 2SC3422DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 40V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierLow speed switchingSuitable for output stage of 5 watts car radio and car stere

isc Silicon NPN Power Transistor 2SC3421DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOComplement to Type 2SA1358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for driver of 60 to 80 Watts audio amplifier.ABSOLUTE MAXIMUM RATI