2SC3432 - Даташиты. Аналоги. Основные параметры

2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol R

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

2 3437 SC TRANSISTOR (NPN) SOT 23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Diss

SMD Type Transistors NPN Transistors 2SC3437 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

SMD Type Transistors NPN Transistors 2SC3438 1.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SA1368 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo

SMD Type Transistors NPN Transistors 2SC3439 1.70 0.1 Features High hFE hFE=400 to 1800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1369 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symb